IAUZN08S7L177ATMA1 vs IAUC120N04S6N010ATMA1 Comparison
Detailed side-by-side comparison of IAUZN08S7L177ATMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZN08S7L177ATMA1
IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon
IAUZN08S7L177ATMA1 β ActiveInfineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZN08S7L177ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.68 |
| Technology | OptiMOS 7 N-channel power MOSFET | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) | 35 A (Tj) | β |
| Power Dissipation (PD) | 45 W (Tc) | β |
| On-Resistance (RDS(on)) | 17.7 mΞ© max | β |
| Package | PG-TSDSON-8-44 (S3O8, 3x3 mmΒ²) | PG-TDSON-8-34 (5x6 mm leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | N-Channel | Single N-channel |
| Operating Temperature | -55C to +175C (Tj, automotive grade) | β |
| Configuration | Single | β |
| Qualification | AEC-Q101 automotive | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Lead-Free | Yes | β |
| RoHS Status | Compliant | Compliant |
| Family | Infineon OptiMOS 7 automotive, 80 V | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | β | 40 V |
| Continuous Drain Current (Id, Tc) | β | 150 A |
| Power Dissipation (Pd, Tc) | β | 150 W |
| RDS(on) at VGS=10V (typ) | β | 1.0 mΞ© |
| RDS(on) at VGS=10V (max per LCSC excerpt) | β | 1.03 mΞ© |
| Gate-Source Threshold (VGS(th), typ) | β | 3 V (at 90 Β΅A) |
| Automotive Qualification | β | AEC-Q101 |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) |
| Gate Drive Recommendation | β | 10 V VGS for full RDS(on) spec |