IAUZN08S7L177ATMA1 vs IAUC60N04S6L030HATMA1 Vergleich
Detaillierter Direktvergleich von IAUZN08S7L177ATMA1 von Infineon und IAUC60N04S6L030HATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZN08S7L177ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,89 | $0,94 |
| Technology | OptiMOS 7 N-channel power MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) | 35 A (Tj) | — |
| Power Dissipation (PD) | 45 W (Tc) | — |
| On-Resistance (RDS(on)) | 17.7 mΩ max | — |
| Gehäuse | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Betriebstemperatur | -55C to +175C (Tj, automotive grade) | — |
| Configuration | Single | Half-Bridge (2 N-Channel) |
| Qualification | AEC-Q101 automotive | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Lead-Free | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Family | Infineon OptiMOS 7 automotive, 80 V | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 6 |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |