IAUZN08S7L177ATMA1 vs IAUC60N04S6L030HATMA1 Comparison

Detailed side-by-side comparison of IAUZN08S7L177ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUZN08S7L177ATMA1

IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon

IAUZN08S7L177ATMA1 βœ“ Active
Infineon
IAUC60N04S6L030HATMA1

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 βœ“ Active

Specification Comparison

Parameter IAUZN08S7L177ATMA1 IAUC60N04S6L030HATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.94
Technology OptiMOS 7 N-channel power MOSFET β€”
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) 35 A (Tj) β€”
Power Dissipation (PD) 45 W (Tc) β€”
On-Resistance (RDS(on)) 17.7 mΞ© max β€”
Package PG-TSDSON-8-44 (S3O8, 3x3 mmΒ²) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Mounting Type Surface Mount Surface Mount
Polarity N-Channel β€”
Operating Temperature -55C to +175C (Tj, automotive grade) β€”
Configuration Single Half-Bridge (2 N-Channel)
Qualification AEC-Q101 automotive β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Lead-Free Yes β€”
RoHS Status Compliant Compliant
Family Infineon OptiMOS 7 automotive, 80 V β€”
Manufacturer β€” Infineon Technologies
Part Series β€” OptiMOS 6
Continuous Drain Current (ID) at TJ β€” 60 A
On-Resistance R_DS(on) at VGS=10V β€” 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V β€” 35 nC
Output Capacitance (Coss) β€” 2.128 nF
Reverse Transfer Capacitance (Crss) β€” 596 pF
Gate Threshold Voltage (VGS(th)) β€” 2 V
Maximum Power Dissipation (PD) at TC β€” 75 W
Operating Junction Temperature β€” -55 C to +175 C
Automotive Qualification β€” AEC-Q101 (per part number suffix)

Datasheets & Resources

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