IDD06SG60CXTMA2 vs IGD06N60TATMA1 Vergleich
Detaillierter Direktvergleich von IDD06SG60CXTMA2 von Infineon und IGD06N60TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IDD06SG60CXTMA2 | IGD06N60TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Diodes | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,54 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ Schottky Diode G3 (thinQ™) | — |
| Diode Configuration | Single | — |
| Technology | Silicon Carbide (SiC) Schottky | — |
| Reverse Voltage (VRRM) | 600 V | — |
| Continuous Forward Current (IF) | 6 A | — |
| Repetitive Peak Forward Current (IFRM) | [DATA_NEEDED: IFRM] | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 32 A | — |
| Forward Voltage (VF) at IF=6A | 2.1 V (typical) | — |
| Reverse Current (IR) Max | 500 nA | — |
| Total Capacitive Charge (Qc) | [DATA_NEEDED: Qc value] | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -40 °C to +175 °C |
| Gehäuse / Bauform | PG-TO252-3 (DPAK) | — |
| Montagestil | Surface Mount (SMD/SMT) | — |
| Packaging | Cut Tape (Tape & Reel per factory standard) | — |
| RoHS-Status | Compliant | Compliant |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous Collector Current (IC) at TC=25°C | — | 12 A |
| Continuous Collector Current (IC) at TC=100°C | — | 6 A |
| Maximum Pulsed Collector Current (ICM) | — | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | — | 88 W |
| Gate-Emitter Voltage (VGE) | — | ±20 V |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | — | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | — | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | — | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff] |
| Integrated Diode | — | Yes, soft-recovery emitter-controlled diode |
| Storage Temperature | — | -55 °C to +150 °C |
| Gehäuse | — | PG-TO252-3-11 (DPAK / TO-252) |
| Montageart | — | Surface Mount |
| Lead-Free | — | Yes |