IDD06SG60CXTMA2 vs IGD06N60TATMA1 Comparaison
Comparaison détaillée côte à côte de IDD06SG60CXTMA2 par Infineon et IGD06N60TATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IDD06SG60CXTMA2 | IGD06N60TATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Diodes | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,54 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ Schottky Diode G3 (thinQ™) | — |
| Diode Configuration | Single | — |
| Technology | Silicon Carbide (SiC) Schottky | — |
| Reverse Voltage (VRRM) | 600 V | — |
| Continuous Forward Current (IF) | 6 A | — |
| Repetitive Peak Forward Current (IFRM) | [DATA_NEEDED: IFRM] | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 32 A | — |
| Forward Voltage (VF) at IF=6A | 2.1 V (typical) | — |
| Reverse Current (IR) Max | 500 nA | — |
| Total Capacitive Charge (Qc) | [DATA_NEEDED: Qc value] | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | -40 °C to +175 °C |
| Boîtier / Format | PG-TO252-3 (DPAK) | — |
| Style de montage | Surface Mount (SMD/SMT) | — |
| Packaging | Cut Tape (Tape & Reel per factory standard) | — |
| Statut RoHS | Compliant | Compliant |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous Collector Current (IC) at TC=25°C | — | 12 A |
| Continuous Collector Current (IC) at TC=100°C | — | 6 A |
| Maximum Pulsed Collector Current (ICM) | — | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | — | 88 W |
| Gate-Emitter Voltage (VGE) | — | ±20 V |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | — | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | — | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | — | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff] |
| Integrated Diode | — | Yes, soft-recovery emitter-controlled diode |
| Storage Temperature | — | -55 °C to +150 °C |
| Boîtier | — | PG-TO252-3-11 (DPAK / TO-252) |
| Type de montage | — | Surface Mount |
| Lead-Free | — | Yes |