IDD06SG60CXTMA2 vs IGD06N60TATMA1 对比

详细并排对比 IDD06SG60CXTMA2 出自 Infineon 和 IGD06N60TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IGD06N60TATMA1 IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 ✓ 量产中

规格对比

参数 IDD06SG60CXTMA2 IGD06N60TATMA1
品牌 Infineon Infineon
分类 Diodes Transistors
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.54 $0.62
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ Schottky Diode G3 (thinQ™) —
Diode Configuration Single —
Technology Silicon Carbide (SiC) Schottky —
Reverse Voltage (VRRM) 600 V —
Continuous Forward Current (IF) 6 A —
Repetitive Peak Forward Current (IFRM) [DATA_NEEDED: IFRM] —
Non-Repetitive Peak Forward Surge Current (IFSM) 32 A —
Forward Voltage (VF) at IF=6A 2.1 V (typical) —
Reverse Current (IR) Max 500 nA —
Total Capacitive Charge (Qc) [DATA_NEEDED: Qc value] —
工作结温 -55 °C to +175 °C -40 °C to +175 °C
封装 / 外壳 PG-TO252-3 (DPAK) —
安装方式 Surface Mount (SMD/SMT) —
Packaging Cut Tape (Tape & Reel per factory standard) —
RoHS 状态 Compliant Compliant
Series — TRENCHSTOP IGBT3
IGBT Type — Trench Field Stop
Collector-Emitter Voltage (VCE) — 600 V
Continuous Collector Current (IC) at TC=25°C — 12 A
Continuous Collector Current (IC) at TC=100°C — 6 A
Maximum Pulsed Collector Current (ICM) — 18 A (per datasheet)
Maximum Power Dissipation (Ptot) — 88 W
Gate-Emitter Voltage (VGE) — ±20 V
VCE(sat) at IC=6A, VGE=15V, Tj=25°C — 1.5 V (typical)
Gate Threshold Voltage (VGE(th)) — 3.0 V min / 5.0 V max (typical 4.0 V)
Turn-on Switching Energy (Eon) — [DATA_NEEDED: Eon]
Turn-off Switching Energy (Eoff) — [DATA_NEEDED: Eoff]
Integrated Diode — Yes, soft-recovery emitter-controlled diode
Storage Temperature — -55 °C to +150 °C
封装 — PG-TO252-3-11 (DPAK / TO-252)
安装类型 — Surface Mount
Lead-Free — Yes

数据手册与资源

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