IDD06SG60CXTMA2 vs IGD06N60TATMA1 비교

다음의 상세 나란히 비교: IDD06SG60CXTMA2 제조: Infineon 및 IGD06N60TATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IGD06N60TATMA1 IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 ✓ 활성

사양 비교

파라미터 IDD06SG60CXTMA2 IGD06N60TATMA1
브랜드 Infineon Infineon
카테고리 Diodes Transistors
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.54 $0.62
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ Schottky Diode G3 (thinQ™) —
Diode Configuration Single —
Technology Silicon Carbide (SiC) Schottky —
Reverse Voltage (VRRM) 600 V —
Continuous Forward Current (IF) 6 A —
Repetitive Peak Forward Current (IFRM) [DATA_NEEDED: IFRM] —
Non-Repetitive Peak Forward Surge Current (IFSM) 32 A —
Forward Voltage (VF) at IF=6A 2.1 V (typical) —
Reverse Current (IR) Max 500 nA —
Total Capacitive Charge (Qc) [DATA_NEEDED: Qc value] —
동작 접합 온도 -55 °C to +175 °C -40 °C to +175 °C
패키지 / 케이스 PG-TO252-3 (DPAK) —
장착 스타일 Surface Mount (SMD/SMT) —
Packaging Cut Tape (Tape & Reel per factory standard) —
RoHS 상태 Compliant Compliant
Series — TRENCHSTOP IGBT3
IGBT Type — Trench Field Stop
Collector-Emitter Voltage (VCE) — 600 V
Continuous Collector Current (IC) at TC=25°C — 12 A
Continuous Collector Current (IC) at TC=100°C — 6 A
Maximum Pulsed Collector Current (ICM) — 18 A (per datasheet)
Maximum Power Dissipation (Ptot) — 88 W
Gate-Emitter Voltage (VGE) — ±20 V
VCE(sat) at IC=6A, VGE=15V, Tj=25°C — 1.5 V (typical)
Gate Threshold Voltage (VGE(th)) — 3.0 V min / 5.0 V max (typical 4.0 V)
Turn-on Switching Energy (Eon) — [DATA_NEEDED: Eon]
Turn-off Switching Energy (Eoff) — [DATA_NEEDED: Eoff]
Integrated Diode — Yes, soft-recovery emitter-controlled diode
Storage Temperature — -55 °C to +150 °C
패키지 — PG-TO252-3-11 (DPAK / TO-252)
실장 유형 — Surface Mount
Lead-Free — Yes

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