IDDD10G65C6XTMA1 vs IDL04G65C5XUMA2 Vergleich

Detaillierter Direktvergleich von IDDD10G65C6XTMA1 von Infineon und IDL04G65C5XUMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IDDD10G65C6XTMA1 IDDD10G65C6XTMA1 - 650V 29A SiC Schottky Diode | Infineon

IDDD10G65C6XTMA1 - 650V 29A SiC Schottky Diode | Infineon

IDDD10G65C6XTMA1 ✓ Aktiv
Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ Aktiv

Spezifikationsvergleich

Parameter IDDD10G65C6XTMA1 IDL04G65C5XUMA2
Marke Infineon Infineon
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,40 $0,92
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC+ 6th Generation CoolSiC™ Schottky Diode Generation 5
Diode Type Silicon Carbide (SiC) Schottky Silicon Carbide (SiC) Schottky
Configuration Single Diode —
Repetitive Peak Reverse Voltage (VRRM) 650 V —
Average Rectified Forward Current (IF(AV)) 29 A —
Non-Repetitive Peak Forward Surge Current (IFSM) [DATA_NEEDED: IFSM value] —
Forward Voltage (VF) at IF 1.5 V typical at 10 A —
Reverse Recovery Charge (Qc) Zero (no minority carrier storage) —
Reverse Recovery Time (trr) 0 ns (Schottky, no recovery) —
Betriebs-Sperrschichttemperaturbereich -55 C to +175 C —
Gehäuse PG-HDSOP-10-1 (10-pin HDSOP with exposed pad) PG-VSON-4 (DPAK real2pin) Surface Mount
Montageart Surface Mount (Tape & Reel) Surface Mount, Tape & Reel
Lead-Free / RoHS Yes / Compliant —
MSL-Level MSL 1 (per JEDEC J-STD-020) —
Typical Application PFC, totem-pole PFC, solar inverter, EV OBC —
Repetitive Peak Reverse Voltage (V_RRM) — 650 V
Continuous Forward Current (I_F(AV)) — 4 A
Total Capacitive Charge (Q_C) — 7 nC (typical)
Forward Voltage (V_F) — 1.7 V at 4 A (typical, per datasheet)
Reverse Leakage Current (I_R) — 70 µA at 650 V
Junction Capacitance (C_J) — 130 pF at 1 V, 1 MHz
Reverse Recovery Time (t_rr) — 0 ns (Schottky, no minority-carrier storage)
Betriebs-Sperrschichttemperatur — -55°C to +175°C
Pin-Anzahl — 4 (with exposed thermal pad)
RoHS / REACH — RoHS Compliant (per Infineon product page)

Datenblätter & Ressourcen

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