IDDD10G65C6XTMA1 vs IDL04G65C5XUMA2 Comparison

Detailed side-by-side comparison of IDDD10G65C6XTMA1 by Infineon and IDL04G65C5XUMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IDDD10G65C6XTMA1 IDDD10G65C6XTMA1 - 650V 29A SiC Schottky Diode | Infineon

IDDD10G65C6XTMA1 - 650V 29A SiC Schottky Diode | Infineon

IDDD10G65C6XTMA1 βœ“ Active
Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 βœ“ Active

Specification Comparison

Parameter IDDD10G65C6XTMA1 IDL04G65C5XUMA2
Brand Infineon Infineon
Category Diodes Diodes
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.40 $0.92
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC+ 6th Generation CoolSiCβ„’ Schottky Diode Generation 5
Diode Type Silicon Carbide (SiC) Schottky Silicon Carbide (SiC) Schottky
Configuration Single Diode β€”
Repetitive Peak Reverse Voltage (VRRM) 650 V β€”
Average Rectified Forward Current (IF(AV)) 29 A β€”
Non-Repetitive Peak Forward Surge Current (IFSM) [DATA_NEEDED: IFSM value] β€”
Forward Voltage (VF) at IF 1.5 V typical at 10 A β€”
Reverse Recovery Charge (Qc) Zero (no minority carrier storage) β€”
Reverse Recovery Time (trr) 0 ns (Schottky, no recovery) β€”
Operating Junction Temperature Range -55 C to +175 C β€”
Package PG-HDSOP-10-1 (10-pin HDSOP with exposed pad) PG-VSON-4 (DPAK real2pin) Surface Mount
Mounting Type Surface Mount (Tape & Reel) Surface Mount, Tape & Reel
Lead-Free / RoHS Yes / Compliant β€”
MSL Level MSL 1 (per JEDEC J-STD-020) β€”
Typical Application PFC, totem-pole PFC, solar inverter, EV OBC β€”
Repetitive Peak Reverse Voltage (V_RRM) β€” 650 V
Continuous Forward Current (I_F(AV)) β€” 4 A
Total Capacitive Charge (Q_C) β€” 7 nC (typical)
Forward Voltage (V_F) β€” 1.7 V at 4 A (typical, per datasheet)
Reverse Leakage Current (I_R) β€” 70 Β΅A at 650 V
Junction Capacitance (C_J) β€” 130 pF at 1 V, 1 MHz
Reverse Recovery Time (t_rr) β€” 0 ns (Schottky, no minority-carrier storage)
Operating Junction Temperature β€” -55Β°C to +175Β°C
Pin Count β€” 4 (with exposed thermal pad)
RoHS / REACH β€” RoHS Compliant (per Infineon product page)

Datasheets & Resources

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