IDDD10G65C6XTMA1 vs IDL04G65C5XUMA2 Comparación
Comparación detallada lado a lado de IDDD10G65C6XTMA1 por Infineon y IDL04G65C5XUMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IDDD10G65C6XTMA1 | IDL04G65C5XUMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,40 | $0,92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC+ 6th Generation | CoolSiC™ Schottky Diode Generation 5 |
| Diode Type | Silicon Carbide (SiC) Schottky | Silicon Carbide (SiC) Schottky |
| Configuration | Single Diode | — |
| Repetitive Peak Reverse Voltage (VRRM) | 650 V | — |
| Average Rectified Forward Current (IF(AV)) | 29 A | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | [DATA_NEEDED: IFSM value] | — |
| Forward Voltage (VF) at IF | 1.5 V typical at 10 A | — |
| Reverse Recovery Charge (Qc) | Zero (no minority carrier storage) | — |
| Reverse Recovery Time (trr) | 0 ns (Schottky, no recovery) | — |
| Rango de temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | PG-HDSOP-10-1 (10-pin HDSOP with exposed pad) | PG-VSON-4 (DPAK real2pin) Surface Mount |
| Tipo de montaje | Surface Mount (Tape & Reel) | Surface Mount, Tape & Reel |
| Lead-Free / RoHS | Yes / Compliant | — |
| Nivel MSL | MSL 1 (per JEDEC J-STD-020) | — |
| Typical Application | PFC, totem-pole PFC, solar inverter, EV OBC | — |
| Repetitive Peak Reverse Voltage (V_RRM) | — | 650 V |
| Continuous Forward Current (I_F(AV)) | — | 4 A |
| Total Capacitive Charge (Q_C) | — | 7 nC (typical) |
| Forward Voltage (V_F) | — | 1.7 V at 4 A (typical, per datasheet) |
| Reverse Leakage Current (I_R) | — | 70 µA at 650 V |
| Junction Capacitance (C_J) | — | 130 pF at 1 V, 1 MHz |
| Reverse Recovery Time (t_rr) | — | 0 ns (Schottky, no minority-carrier storage) |
| Temperatura de unión de funcionamiento | — | -55°C to +175°C |
| Recuento de pines | — | 4 (with exposed thermal pad) |
| RoHS / REACH | — | RoHS Compliant (per Infineon product page) |