IGB30N60H3ATMA1 vs IKD15N60RFATMA1 Vergleich

Detaillierter Direktvergleich von IGB30N60H3ATMA1 von Infineon und IKD15N60RFATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IGB30N60H3ATMA1 IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 ✓ Aktiv
Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IGB30N60H3ATMA1 IKD15N60RFATMA1
Marke Infineon Infineon
Kategorie IGBTs IGBTs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,62 $1,35
Manufacturer Infineon Technologies —
Product Family TRENCHSTOP IGBT3 —
Collector-Emitter Voltage (VCE) 600 V —
Continuous DC Collector Current (IC, TC=25C) 60 A —
Pulsed Collector Current (ICpuls) [DATA_NEEDED: pulsed collector current value] —
Verlustleistung (Ptot) 187 W —
Gate-Emitter Voltage (VGE) +/- 20 V —
Kollektor-Emitter-Sättigungsspannung (Vce(sat)) 1.95 V (typ, at IC=30 A, VGE=15 V) —
Gate-Emitter Threshold Voltage (VGE(th)) [DATA_NEEDED: VGE(th) typical value] —
Turn-Off Time (toff) 262 ns (nominal) —
Technology Trench Field Stop TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode)
Configuration Single IGBT —
Gehäuse PG-TO263-3-2 (D2PAK) PG-TO252-3 (DPAK), 3 pins (2 + tab)
Montageart Surface Mount Surface Mount
Betriebs-Sperrschichttemperatur -40C to +175C -40C to +175C
Storage Temperature -55C to +150C —
Terminal Form Gull Wing —
Pin-Anzahl 3 (2 + Tab) —
RoHS-Status Compliant —
Switching Behavior MOSFET-like turn-off —
Collector-Emitter Voltage (VCES) — 600 V
Continuous Collector Current (IC at TC=25C) — 30 A
Continuous Collector Current (IC at TC=100C) — 15 A
Pulsed Collector Current (ICM) — [DATA_NEEDED: ICM value]
Gate-Emitter Voltage (VGES) — +/-20 V
Gate-Emitter Threshold (VGE(th)) — [DATA_NEEDED: VGE(th) typical value]
VCE(sat) at IC=15A, VGE=15V — 1.5 V (typical)
Maximum Power Dissipation (Ptot) — 250 W
Integrated Anti-Parallel Diode — Yes (RC-Drives Fast, co-packaged)
Switching Speed Class — Hard-switching, RC-Drives Fast
Target Application — Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives)
RoHS Compliance — Compliant

Datenblätter & Ressourcen

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