IGB30N60H3ATMA1 vs IKD15N60RFATMA1 Comparación
Comparación detallada lado a lado de IGB30N60H3ATMA1 por Infineon y IKD15N60RFATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IGB30N60H3ATMA1 | IKD15N60RFATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | IGBTs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $1,35 |
| Manufacturer | Infineon Technologies | — |
| Product Family | TRENCHSTOP IGBT3 | — |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous DC Collector Current (IC, TC=25C) | 60 A | — |
| Pulsed Collector Current (ICpuls) | [DATA_NEEDED: pulsed collector current value] | — |
| Disipación de potencia (Ptot) | 187 W | — |
| Gate-Emitter Voltage (VGE) | +/- 20 V | — |
| Tensión de saturación colector-emisor (Vce(sat)) | 1.95 V (typ, at IC=30 A, VGE=15 V) | — |
| Gate-Emitter Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| Turn-Off Time (toff) | 262 ns (nominal) | — |
| Technology | Trench Field Stop | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) |
| Configuration | Single IGBT | — |
| Encapsulado | PG-TO263-3-2 (D2PAK) | PG-TO252-3 (DPAK), 3 pins (2 + tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de unión de funcionamiento | -40C to +175C | -40C to +175C |
| Storage Temperature | -55C to +150C | — |
| Terminal Form | Gull Wing | — |
| Recuento de pines | 3 (2 + Tab) | — |
| Estado RoHS | Compliant | — |
| Switching Behavior | MOSFET-like turn-off | — |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC at TC=25C) | — | 30 A |
| Continuous Collector Current (IC at TC=100C) | — | 15 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Gate-Emitter Voltage (VGES) | — | +/-20 V |
| Gate-Emitter Threshold (VGE(th)) | — | [DATA_NEEDED: VGE(th) typical value] |
| VCE(sat) at IC=15A, VGE=15V | — | 1.5 V (typical) |
| Maximum Power Dissipation (Ptot) | — | 250 W |
| Integrated Anti-Parallel Diode | — | Yes (RC-Drives Fast, co-packaged) |
| Switching Speed Class | — | Hard-switching, RC-Drives Fast |
| Target Application | — | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) |
| RoHS Compliance | — | Compliant |