IGD08N120S7ATMA1 vs BSC014NE2LSIATMA1 Vergleich
Detaillierter Direktvergleich von IGD08N120S7ATMA1 von Infineon und BSC014NE2LSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IGD08N120S7ATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,65 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Betriebs-Sperrschichttemperatur | -40C to +175C (industry grade) | -55 °C to +150 °C |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TDSON-8-7 (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | N-Channel MOSFET (OptiMOS 25V) |
| Configuration | Single | — |
| RoHS-Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 25 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 33 A |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 74 W |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |