IGD08N120S7ATMA1 vs BSC014NE2LSIATMA1 Сравнение
Подробное сравнение бок о бок IGD08N120S7ATMA1 от Infineon и BSC014NE2LSIATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IGD08N120S7ATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | IGBTs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,65 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Рабочая температура перехода | -40C to +175C (industry grade) | -55 °C to +150 °C |
| Корпус | PG-TO252-3 (DPAK) | PG-TDSON-8-7 (SuperSO8) |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | N-Channel MOSFET (OptiMOS 25V) |
| Configuration | Single | — |
| Статус RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 25 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 33 A |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 74 W |
| Уровень MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |