IGD08N120S7ATMA1 vs IKD10N60RC2ATMA1 Vergleich

Detaillierter Direktvergleich von IGD08N120S7ATMA1 von Infineon und IKD10N60RC2ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IGD08N120S7ATMA1 IGD08N120S7ATMA1 - 1200V Trench Stop IGBT, 24A | Infineon

IGD08N120S7ATMA1 - 1200V Trench Stop IGBT, 24A | Infineon

IGD08N120S7ATMA1 ✓ Aktiv
Infineon
IKD10N60RC2ATMA1 IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IGD08N120S7ATMA1 IKD10N60RC2ATMA1
Marke Infineon Infineon
Kategorie IGBTs IGBTs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,65 $0,83
Manufacturer Infineon Technologies —
Product Family IGBT 7 (S7) Trench Field Stop —
Collector-Emitter Voltage (Vce max) 1200 V —
Continuous Collector Current (Ic, Tc=25C) 24 A —
Pulsed Collector Current (Icm) [DATA_NEEDED: pulsed collector current] —
Total Power Dissipation (Ptot) 106 W —
Gate-Emitter Voltage (Vge max) [DATA_NEEDED: Vge max] —
VCE(sat) at rated Ic 1.65 V —
Co-packaged Diode Yes (anti-parallel emitter diode) —
Betriebs-Sperrschichttemperatur -40C to +175C (industry grade) —
Gehäuse PG-TO252-3 (DPAK) PG-TO252-3 (DPAK, surface mount)
Montageart Surface Mount Surface Mount
Technology Trench Field Stop, 7th generation TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode)
Configuration Single —
RoHS-Status Compliant Compliant
Collector-Emitter Voltage (V_CE) — 600 V
Continuous Collector Current (I_C nom) — 10 A
Pulsed Collector Current (I_Cp) — 18.8 A
Maximum Power Dissipation (P_tot) — 79 W
Integrated Diode — Yes - reverse-conducting 2-diode co-packed
Betriebstemperaturbereich — -40 C to +175 C (junction)
Gate-Emitter Voltage (V_GE) — [DATA_NEEDED: recommended V_GE value]
V_CE(sat) at I_C — [DATA_NEEDED: typical V_CE(sat)]
Switching Frequency (typical) — 10 - 30 kHz (hard-switching)
Short-Circuit Withstand Time — [DATA_NEEDED: t_sc rating]
Qualification — Industrial (qualified per Infineon product validation)

Datenblätter & Ressourcen

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