IGD08N120S7ATMA1 vs IKD10N60RC2ATMA1 비교
다음의 상세 나란히 비교: IGD08N120S7ATMA1 제조: Infineon 및 IKD10N60RC2ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IGD08N120S7ATMA1 | IKD10N60RC2ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | IGBTs | IGBTs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.65 | $0.83 |
| Manufacturer | Infineon Technologies | — |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| 동작 접합 온도 | -40C to +175C (industry grade) | — |
| 패키지 | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK, surface mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) |
| Configuration | Single | — |
| RoHS 상태 | Compliant | Compliant |
| Collector-Emitter Voltage (V_CE) | — | 600 V |
| Continuous Collector Current (I_C nom) | — | 10 A |
| Pulsed Collector Current (I_Cp) | — | 18.8 A |
| Maximum Power Dissipation (P_tot) | — | 79 W |
| Integrated Diode | — | Yes - reverse-conducting 2-diode co-packed |
| 동작 온도 범위 | — | -40 C to +175 C (junction) |
| Gate-Emitter Voltage (V_GE) | — | [DATA_NEEDED: recommended V_GE value] |
| V_CE(sat) at I_C | — | [DATA_NEEDED: typical V_CE(sat)] |
| Switching Frequency (typical) | — | 10 - 30 kHz (hard-switching) |
| Short-Circuit Withstand Time | — | [DATA_NEEDED: t_sc rating] |
| Qualification | — | Industrial (qualified per Infineon product validation) |