IGD08N120S7ATMA1 vs IKD10N60RC2ATMA1 Comparação

Comparação detalhada lado a lado de IGD08N120S7ATMA1 por Infineon e IKD10N60RC2ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Infineon
IGD08N120S7ATMA1 IGD08N120S7ATMA1 - 1200V Trench Stop IGBT, 24A | Infineon

IGD08N120S7ATMA1 - 1200V Trench Stop IGBT, 24A | Infineon

IGD08N120S7ATMA1 ✓ Ativo
Infineon
IKD10N60RC2ATMA1 IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 ✓ Ativo

Comparação de especificações

Parâmetro IGD08N120S7ATMA1 IKD10N60RC2ATMA1
Marca Infineon Infineon
Categoria IGBTs IGBTs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $1,65 $0,83
Manufacturer Infineon Technologies —
Product Family IGBT 7 (S7) Trench Field Stop —
Collector-Emitter Voltage (Vce max) 1200 V —
Continuous Collector Current (Ic, Tc=25C) 24 A —
Pulsed Collector Current (Icm) [DATA_NEEDED: pulsed collector current] —
Total Power Dissipation (Ptot) 106 W —
Gate-Emitter Voltage (Vge max) [DATA_NEEDED: Vge max] —
VCE(sat) at rated Ic 1.65 V —
Co-packaged Diode Yes (anti-parallel emitter diode) —
Temperatura de junção de operação -40C to +175C (industry grade) —
Encapsulamento PG-TO252-3 (DPAK) PG-TO252-3 (DPAK, surface mount)
Tipo de montagem Surface Mount Surface Mount
Technology Trench Field Stop, 7th generation TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode)
Configuration Single —
Status RoHS Compliant Compliant
Collector-Emitter Voltage (V_CE) — 600 V
Continuous Collector Current (I_C nom) — 10 A
Pulsed Collector Current (I_Cp) — 18.8 A
Maximum Power Dissipation (P_tot) — 79 W
Integrated Diode — Yes - reverse-conducting 2-diode co-packed
Faixa de temperatura de operação — -40 C to +175 C (junction)
Gate-Emitter Voltage (V_GE) — [DATA_NEEDED: recommended V_GE value]
V_CE(sat) at I_C — [DATA_NEEDED: typical V_CE(sat)]
Switching Frequency (typical) — 10 - 30 kHz (hard-switching)
Short-Circuit Withstand Time — [DATA_NEEDED: t_sc rating]
Qualification — Industrial (qualified per Infineon product validation)

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