IGLT65R035D2ATMA1 vs IMLT65R040M2HXTMA1 Vergleich
Detaillierter Direktvergleich von IGLT65R035D2ATMA1 von Infineon und IMLT65R040M2HXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IGLT65R035D2ATMA1 | IMLT65R040M2HXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,10 | $4,25 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 TOLT | CoolSiC™ G2 (2nd generation SiC trench) |
| Transistortyp | N-Channel enhancement-mode GaN HEMT | — |
| Drain-Source Voltage (Vdss) | 650 V | — |
| Continuous Drain Current (Id) at Tc | 47 A | — |
| Maximum Power Dissipation (Pd) at Tc | 154 W | — |
| On-Resistance (Rds(on)) | [DATA_NEEDED: typical Rds(on) in mohm] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Input Capacitance (Ciss) at Vds=400V | 540 pF | — |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj min/max] | — |
| Gehäuse | PG-HDSOP-16-8 (top-side cooled) | PG-HDSOP-16-6 (surface mount, top-side-cooled) |
| Montageart | Surface Mount | Surface Mount |
| Cooling Configuration | Top-side cooled (TOLT) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Production Wafer Size | 200 mm (8 inch) | — |
| Technology | — | Silicon Carbide (SiC) N-channel MOSFET |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, TC) | — | 57 A |
| Pulsed Drain Current (ID,pulse) | — | 143 A |
| On-State Resistance RDS(on) (typ, VGS=18V) | — | 40 mΩ |
| On-State Resistance RDS(on) (max, VGS=18V) | — | 49 mΩ |
| Total Gate Charge QG | — | 28 nC |
| Output Charge QOSS @ 400 V | — | 53 nC |
| Output Energy EOSS @ 400 V | — | 7.2 µJ |
| Continuous Drain Power Dissipation (PD, TC) | — | 268 W |
| Recommended Gate Drive Voltage VGS | — | 18 V (turn-off: 0 V or negative) |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +150 °C |
| Qualification | — | JEDEC industrial |
| Packaging | — | Tape & Reel |
| Special Features | — | Kelvin source pin, low reverse-recovery charge, hard-switching optimized |