IGLT65R035D2ATMA1 vs IMLT65R040M2HXTMA1 비교

다음의 상세 나란히 비교: IGLT65R035D2ATMA1 제조: Infineon 및 IMLT65R040M2HXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IGLT65R035D2ATMA1 IMLT65R040M2HXTMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $5.10 $4.25
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 TOLT CoolSiC™ G2 (2nd generation SiC trench)
트랜지스터 유형 N-Channel enhancement-mode GaN HEMT —
Drain-Source Voltage (Vdss) 650 V —
Continuous Drain Current (Id) at Tc 47 A —
Maximum Power Dissipation (Pd) at Tc 154 W —
On-Resistance (Rds(on)) [DATA_NEEDED: typical Rds(on) in mohm] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Input Capacitance (Ciss) at Vds=400V 540 pF —
동작 온도 범위 [DATA_NEEDED: Tj min/max] —
패키지 PG-HDSOP-16-8 (top-side cooled) PG-HDSOP-16-6 (surface mount, top-side-cooled)
실장 유형 Surface Mount Surface Mount
Cooling Configuration Top-side cooled (TOLT) —
MSL 레벨 [DATA_NEEDED: MSL rating] —
RoHS 상태 Compliant —
Lead-Free Yes —
Production Wafer Size 200 mm (8 inch) —
Technology — Silicon Carbide (SiC) N-channel MOSFET
Drain-Source Voltage (VDS) — 650 V
Continuous Drain Current (ID, TC) — 57 A
Pulsed Drain Current (ID,pulse) — 143 A
On-State Resistance RDS(on) (typ, VGS=18V) — 40 mΩ
On-State Resistance RDS(on) (max, VGS=18V) — 49 mΩ
Total Gate Charge QG — 28 nC
Output Charge QOSS @ 400 V — 53 nC
Output Energy EOSS @ 400 V — 7.2 µJ
Continuous Drain Power Dissipation (PD, TC) — 268 W
Recommended Gate Drive Voltage VGS — 18 V (turn-off: 0 V or negative)
동작 접합 온도 — -55 °C to +150 °C
Qualification — JEDEC industrial
Packaging — Tape & Reel
Special Features — Kelvin source pin, low reverse-recovery charge, hard-switching optimized

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