IGLT65R035D2ATMA1 vs IMLT65R040M2HXTMA1 Comparación
Comparación detallada lado a lado de IGLT65R035D2ATMA1 por Infineon y IMLT65R040M2HXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IGLT65R035D2ATMA1 | IMLT65R040M2HXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,10 | $4,25 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 TOLT | CoolSiC™ G2 (2nd generation SiC trench) |
| Tipo de transistor | N-Channel enhancement-mode GaN HEMT | — |
| Drain-Source Voltage (Vdss) | 650 V | — |
| Continuous Drain Current (Id) at Tc | 47 A | — |
| Maximum Power Dissipation (Pd) at Tc | 154 W | — |
| On-Resistance (Rds(on)) | [DATA_NEEDED: typical Rds(on) in mohm] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Input Capacitance (Ciss) at Vds=400V | 540 pF | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj min/max] | — |
| Encapsulado | PG-HDSOP-16-8 (top-side cooled) | PG-HDSOP-16-6 (surface mount, top-side-cooled) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Cooling Configuration | Top-side cooled (TOLT) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Production Wafer Size | 200 mm (8 inch) | — |
| Technology | — | Silicon Carbide (SiC) N-channel MOSFET |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, TC) | — | 57 A |
| Pulsed Drain Current (ID,pulse) | — | 143 A |
| On-State Resistance RDS(on) (typ, VGS=18V) | — | 40 mΩ |
| On-State Resistance RDS(on) (max, VGS=18V) | — | 49 mΩ |
| Total Gate Charge QG | — | 28 nC |
| Output Charge QOSS @ 400 V | — | 53 nC |
| Output Energy EOSS @ 400 V | — | 7.2 µJ |
| Continuous Drain Power Dissipation (PD, TC) | — | 268 W |
| Recommended Gate Drive Voltage VGS | — | 18 V (turn-off: 0 V or negative) |
| Temperatura de unión de funcionamiento | — | -55 °C to +150 °C |
| Qualification | — | JEDEC industrial |
| Packaging | — | Tape & Reel |
| Special Features | — | Kelvin source pin, low reverse-recovery charge, hard-switching optimized |