IGLT65R035D2ATMA1 vs IMLT65R040M2HXTMA1 对比

详细并排对比 IGLT65R035D2ATMA1 出自 Infineon 和 IMLT65R040M2HXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 ✓ 量产中
Infineon
IMLT65R040M2HXTMA1 IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon

IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon

IMLT65R040M2HXTMA1 ✓ 量产中

规格对比

参数 IGLT65R035D2ATMA1 IMLT65R040M2HXTMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.10 $4.25
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 TOLT CoolSiC™ G2 (2nd generation SiC trench)
晶体管类型 N-Channel enhancement-mode GaN HEMT —
Drain-Source Voltage (Vdss) 650 V —
Continuous Drain Current (Id) at Tc 47 A —
Maximum Power Dissipation (Pd) at Tc 154 W —
On-Resistance (Rds(on)) [DATA_NEEDED: typical Rds(on) in mohm] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Input Capacitance (Ciss) at Vds=400V 540 pF —
工作温度范围 [DATA_NEEDED: Tj min/max] —
封装 PG-HDSOP-16-8 (top-side cooled) PG-HDSOP-16-6 (surface mount, top-side-cooled)
安装类型 Surface Mount Surface Mount
Cooling Configuration Top-side cooled (TOLT) —
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant —
Lead-Free Yes —
Production Wafer Size 200 mm (8 inch) —
Technology — Silicon Carbide (SiC) N-channel MOSFET
Drain-Source Voltage (VDS) — 650 V
Continuous Drain Current (ID, TC) — 57 A
Pulsed Drain Current (ID,pulse) — 143 A
On-State Resistance RDS(on) (typ, VGS=18V) — 40 mΩ
On-State Resistance RDS(on) (max, VGS=18V) — 49 mΩ
Total Gate Charge QG — 28 nC
Output Charge QOSS @ 400 V — 53 nC
Output Energy EOSS @ 400 V — 7.2 µJ
Continuous Drain Power Dissipation (PD, TC) — 268 W
Recommended Gate Drive Voltage VGS — 18 V (turn-off: 0 V or negative)
工作结温 — -55 °C to +150 °C
Qualification — JEDEC industrial
Packaging — Tape & Reel
Special Features — Kelvin source pin, low reverse-recovery charge, hard-switching optimized

数据手册与资源

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