IGW30N60H3FKSA1 vs IGB30N60H3ATMA1 Vergleich
Detaillierter Direktvergleich von IGW30N60H3FKSA1 von Infineon und IGB30N60H3ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IGW30N60H3FKSA1 | IGB30N60H3ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,49 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Collector-Emitter Breakdown Voltage (VCE, max) | 600 V | — |
| Continuous Collector Current (IC, TC=25°C) | 60 A | — |
| Continuous Collector Current (IC, TC=100°C) | [DATA_NEEDED: IC at TC=100°C] | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Maximum Power Dissipation (Ptot) | 187 W | — |
| Gate-Emitter Voltage (VGE) | ±20 V (max) | +/- 20 V |
| Gate-Emitter Threshold Voltage (VGE(th), typ) | [DATA_NEEDED: VGE(th) typical] | — |
| VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C | [DATA_NEEDED: VCE(sat) value] | — |
| Turn-Off Switching Energy (Eoff) | [DATA_NEEDED: Eoff value] | — |
| Betriebs-Sperrschichttemperaturbereich | -40 °C to +175 °C | — |
| Gehäuse | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab | PG-TO263-3-2 (D2PAK) |
| Anti-Parallel Diode | None (co-packaged without diode) | — |
| Montageart | Through Hole | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | TRENCHSTOP IGBT3 |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous DC Collector Current (IC, TC=25C) | — | 60 A |
| Pulsed Collector Current (ICpuls) | — | [DATA_NEEDED: pulsed collector current value] |
| Verlustleistung (Ptot) | — | 187 W |
| Kollektor-Emitter-Sättigungsspannung (Vce(sat)) | — | 1.95 V (typ, at IC=30 A, VGE=15 V) |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) typical value] |
| Turn-Off Time (toff) | — | 262 ns (nominal) |
| Technology | — | Trench Field Stop |
| Configuration | — | Single IGBT |
| Betriebs-Sperrschichttemperatur | — | -40C to +175C |
| Storage Temperature | — | -55C to +150C |
| Terminal Form | — | Gull Wing |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Switching Behavior | — | MOSFET-like turn-off |