IGW30N60H3FKSA1 vs IGB30N60H3ATMA1 Сравнение
Подробное сравнение бок о бок IGW30N60H3FKSA1 от Infineon и IGB30N60H3ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IGW30N60H3FKSA1 | IGB30N60H3ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | IGBTs | IGBTs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,49 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Collector-Emitter Breakdown Voltage (VCE, max) | 600 V | — |
| Continuous Collector Current (IC, TC=25°C) | 60 A | — |
| Continuous Collector Current (IC, TC=100°C) | [DATA_NEEDED: IC at TC=100°C] | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Maximum Power Dissipation (Ptot) | 187 W | — |
| Gate-Emitter Voltage (VGE) | ±20 V (max) | +/- 20 V |
| Gate-Emitter Threshold Voltage (VGE(th), typ) | [DATA_NEEDED: VGE(th) typical] | — |
| VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C | [DATA_NEEDED: VCE(sat) value] | — |
| Turn-Off Switching Energy (Eoff) | [DATA_NEEDED: Eoff value] | — |
| Диапазон рабочей температуры перехода | -40 °C to +175 °C | — |
| Корпус | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab | PG-TO263-3-2 (D2PAK) |
| Anti-Parallel Diode | None (co-packaged without diode) | — |
| Тип монтажа | Through Hole | Surface Mount |
| Статус RoHS | Compliant | Compliant |
| Product Family | — | TRENCHSTOP IGBT3 |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous DC Collector Current (IC, TC=25C) | — | 60 A |
| Pulsed Collector Current (ICpuls) | — | [DATA_NEEDED: pulsed collector current value] |
| Рассеиваемая мощность (Ptot) | — | 187 W |
| Напряжение насыщения коллектор-эмиттер (Vce(sat)) | — | 1.95 V (typ, at IC=30 A, VGE=15 V) |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th) typical value] |
| Turn-Off Time (toff) | — | 262 ns (nominal) |
| Technology | — | Trench Field Stop |
| Configuration | — | Single IGBT |
| Рабочая температура перехода | — | -40C to +175C |
| Storage Temperature | — | -55C to +150C |
| Terminal Form | — | Gull Wing |
| Число выводов | — | 3 (2 + Tab) |
| Switching Behavior | — | MOSFET-like turn-off |