IGW30N60H3FKSA1 vs IGB30N60H3ATMA1 对比

详细并排对比 IGW30N60H3FKSA1 出自 Infineon 和 IGB30N60H3ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IGW30N60H3FKSA1 IGW30N60H3FKSA1 - 600V 60A TRENCHSTOP IGBT3 TO-247 | Infineon

IGW30N60H3FKSA1 - 600V 60A TRENCHSTOP IGBT3 TO-247 | Infineon

IGW30N60H3FKSA1 ✓ 量产中
Infineon
IGB30N60H3ATMA1 IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 ✓ 量产中

规格对比

参数 IGW30N60H3FKSA1 IGB30N60H3ATMA1
品牌 Infineon Infineon
分类 IGBTs IGBTs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.49 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Series TRENCHSTOP IGBT3 —
IGBT Type Trench Field Stop —
Collector-Emitter Breakdown Voltage (VCE, max) 600 V —
Continuous Collector Current (IC, TC=25°C) 60 A —
Continuous Collector Current (IC, TC=100°C) [DATA_NEEDED: IC at TC=100°C] —
Pulsed Collector Current (ICM) [DATA_NEEDED: ICM value] —
Maximum Power Dissipation (Ptot) 187 W —
Gate-Emitter Voltage (VGE) ±20 V (max) +/- 20 V
Gate-Emitter Threshold Voltage (VGE(th), typ) [DATA_NEEDED: VGE(th) typical] —
VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C [DATA_NEEDED: VCE(sat) value] —
Turn-Off Switching Energy (Eoff) [DATA_NEEDED: Eoff value] —
工作结温范围 -40 °C to +175 °C —
封装 TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab PG-TO263-3-2 (D2PAK)
Anti-Parallel Diode None (co-packaged without diode) —
安装类型 Through Hole Surface Mount
RoHS 状态 Compliant Compliant
Product Family — TRENCHSTOP IGBT3
Collector-Emitter Voltage (VCE) — 600 V
Continuous DC Collector Current (IC, TC=25C) — 60 A
Pulsed Collector Current (ICpuls) — [DATA_NEEDED: pulsed collector current value]
功耗(Ptot) — 187 W
集电极-发射极饱和电压(Vce(sat)) — 1.95 V (typ, at IC=30 A, VGE=15 V)
Gate-Emitter Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th) typical value]
Turn-Off Time (toff) — 262 ns (nominal)
Technology — Trench Field Stop
Configuration — Single IGBT
工作结温 — -40C to +175C
Storage Temperature — -55C to +150C
Terminal Form — Gull Wing
引脚数量 — 3 (2 + Tab)
Switching Behavior — MOSFET-like turn-off

数据手册与资源

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