IHW40N120R5XKSA1 vs IGW30N60H3FKSA1 Vergleich

Detaillierter Direktvergleich von IHW40N120R5XKSA1 von Infineon und IGW30N60H3FKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IHW40N120R5XKSA1 IGW30N60H3FKSA1
Marke Infineon Infineon
Kategorie IGBTs IGBTs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,50 $2,49
Collector-Emitter Voltage (VCE) 1200 V —
Continuous Collector Current (IC, TC=25C) 80 A —
Pulsed Collector Current (ICM) 160 A [DATA_NEEDED: ICM value]
Maximum Power Dissipation (Ptot) 394 W 187 W
Gate-Emitter Voltage (VGE) +/-20 V ±20 V (max)
VCE(sat) at IC=40A, VGE=15V, Tj=25C [DATA_NEEDED: typical VCE(sat) value] —
Integrated Anti-Parallel Diode Yes (monolithic reverse-conducting) —
Technology Trench Field Stop, Reverse-Conducting RC-H5 —
Gehäuse TO-247-3 (PG-TO247-3) through-hole TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab
Montageart Through Hole Through Hole
Betriebs-Sperrschichttemperatur -40C to +175C —
Storage Temperature -55C to +150C —
Soldering Temperature (max 10s) 260 C —
Switching Application Resonant / soft switching (induction cooking optimized) —
RoHS Compliance Compliant —
Halogenfrei Yes —
MSL-Level N/A (through-hole) —
Manufacturer — Infineon Technologies
Series — TRENCHSTOP IGBT3
IGBT Type — Trench Field Stop
Collector-Emitter Breakdown Voltage (VCE, max) — 600 V
Continuous Collector Current (IC, TC=25°C) — 60 A
Continuous Collector Current (IC, TC=100°C) — [DATA_NEEDED: IC at TC=100°C]
Gate-Emitter Threshold Voltage (VGE(th), typ) — [DATA_NEEDED: VGE(th) typical]
VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C — [DATA_NEEDED: VCE(sat) value]
Turn-Off Switching Energy (Eoff) — [DATA_NEEDED: Eoff value]
Betriebs-Sperrschichttemperaturbereich — -40 °C to +175 °C
Anti-Parallel Diode — None (co-packaged without diode)
RoHS-Status — Compliant

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern