IHW40N120R5XKSA1 vs IGW30N60H3FKSA1 비교

다음의 상세 나란히 비교: IHW40N120R5XKSA1 제조: Infineon 및 IGW30N60H3FKSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ 활성

사양 비교

파라미터 IHW40N120R5XKSA1 IGW30N60H3FKSA1
브랜드 Infineon Infineon
카테고리 IGBTs IGBTs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.50 $2.49
Collector-Emitter Voltage (VCE) 1200 V —
Continuous Collector Current (IC, TC=25C) 80 A —
Pulsed Collector Current (ICM) 160 A [DATA_NEEDED: ICM value]
Maximum Power Dissipation (Ptot) 394 W 187 W
Gate-Emitter Voltage (VGE) +/-20 V ±20 V (max)
VCE(sat) at IC=40A, VGE=15V, Tj=25C [DATA_NEEDED: typical VCE(sat) value] —
Integrated Anti-Parallel Diode Yes (monolithic reverse-conducting) —
Technology Trench Field Stop, Reverse-Conducting RC-H5 —
패키지 TO-247-3 (PG-TO247-3) through-hole TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab
실장 유형 Through Hole Through Hole
동작 접합 온도 -40C to +175C —
Storage Temperature -55C to +150C —
Soldering Temperature (max 10s) 260 C —
Switching Application Resonant / soft switching (induction cooking optimized) —
RoHS Compliance Compliant —
할로겐 프리 Yes —
MSL 레벨 N/A (through-hole) —
Manufacturer — Infineon Technologies
Series — TRENCHSTOP IGBT3
IGBT Type — Trench Field Stop
Collector-Emitter Breakdown Voltage (VCE, max) — 600 V
Continuous Collector Current (IC, TC=25°C) — 60 A
Continuous Collector Current (IC, TC=100°C) — [DATA_NEEDED: IC at TC=100°C]
Gate-Emitter Threshold Voltage (VGE(th), typ) — [DATA_NEEDED: VGE(th) typical]
VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C — [DATA_NEEDED: VCE(sat) value]
Turn-Off Switching Energy (Eoff) — [DATA_NEEDED: Eoff value]
동작 접합 온도 범위 — -40 °C to +175 °C
Anti-Parallel Diode — None (co-packaged without diode)
RoHS 상태 — Compliant

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