IHW40N120R5XKSA1 vs IGW30N60H3FKSA1 Comparación
Comparación detallada lado a lado de IHW40N120R5XKSA1 por Infineon y IGW30N60H3FKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IHW40N120R5XKSA1 | IGW30N60H3FKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | IGBTs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,50 | $2,49 |
| Collector-Emitter Voltage (VCE) | 1200 V | — |
| Continuous Collector Current (IC, TC=25C) | 80 A | — |
| Pulsed Collector Current (ICM) | 160 A | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | 394 W | 187 W |
| Gate-Emitter Voltage (VGE) | +/-20 V | ±20 V (max) |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | [DATA_NEEDED: typical VCE(sat) value] | — |
| Integrated Anti-Parallel Diode | Yes (monolithic reverse-conducting) | — |
| Technology | Trench Field Stop, Reverse-Conducting RC-H5 | — |
| Encapsulado | TO-247-3 (PG-TO247-3) through-hole | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab |
| Tipo de montaje | Through Hole | Through Hole |
| Temperatura de unión de funcionamiento | -40C to +175C | — |
| Storage Temperature | -55C to +150C | — |
| Soldering Temperature (max 10s) | 260 C | — |
| Switching Application | Resonant / soft switching (induction cooking optimized) | — |
| RoHS Compliance | Compliant | — |
| Sin halógenos | Yes | — |
| Nivel MSL | N/A (through-hole) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Breakdown Voltage (VCE, max) | — | 600 V |
| Continuous Collector Current (IC, TC=25°C) | — | 60 A |
| Continuous Collector Current (IC, TC=100°C) | — | [DATA_NEEDED: IC at TC=100°C] |
| Gate-Emitter Threshold Voltage (VGE(th), typ) | — | [DATA_NEEDED: VGE(th) typical] |
| VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C | — | [DATA_NEEDED: VCE(sat) value] |
| Turn-Off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff value] |
| Rango de temperatura de unión de funcionamiento | — | -40 °C to +175 °C |
| Anti-Parallel Diode | — | None (co-packaged without diode) |
| Estado RoHS | — | Compliant |