IHW40N120R5XKSA1 vs IGW30N60H3FKSA1 Comparaison
Comparaison détaillée côte à côte de IHW40N120R5XKSA1 par Infineon et IGW30N60H3FKSA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IHW40N120R5XKSA1 | IGW30N60H3FKSA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | IGBTs | IGBTs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,50 | $2,49 |
| Collector-Emitter Voltage (VCE) | 1200 V | — |
| Continuous Collector Current (IC, TC=25C) | 80 A | — |
| Pulsed Collector Current (ICM) | 160 A | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | 394 W | 187 W |
| Gate-Emitter Voltage (VGE) | +/-20 V | ±20 V (max) |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | [DATA_NEEDED: typical VCE(sat) value] | — |
| Integrated Anti-Parallel Diode | Yes (monolithic reverse-conducting) | — |
| Technology | Trench Field Stop, Reverse-Conducting RC-H5 | — |
| Boîtier | TO-247-3 (PG-TO247-3) through-hole | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab |
| Type de montage | Through Hole | Through Hole |
| Température de jonction en fonctionnement | -40C to +175C | — |
| Storage Temperature | -55C to +150C | — |
| Soldering Temperature (max 10s) | 260 C | — |
| Switching Application | Resonant / soft switching (induction cooking optimized) | — |
| RoHS Compliance | Compliant | — |
| Sans halogène | Yes | — |
| Niveau MSL | N/A (through-hole) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Breakdown Voltage (VCE, max) | — | 600 V |
| Continuous Collector Current (IC, TC=25°C) | — | 60 A |
| Continuous Collector Current (IC, TC=100°C) | — | [DATA_NEEDED: IC at TC=100°C] |
| Gate-Emitter Threshold Voltage (VGE(th), typ) | — | [DATA_NEEDED: VGE(th) typical] |
| VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C | — | [DATA_NEEDED: VCE(sat) value] |
| Turn-Off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff value] |
| Plage de température de jonction en fonctionnement | — | -40 °C to +175 °C |
| Anti-Parallel Diode | — | None (co-packaged without diode) |
| Statut RoHS | — | Compliant |