IHW40N120R5XKSA1 vs IPP100N12S305AKSA2 Vergleich
Detaillierter Direktvergleich von IHW40N120R5XKSA1 von Infineon und IPP100N12S305AKSA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ AktivSpezifikationsvergleich
| Parameter | IHW40N120R5XKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,50 | $3,78 |
| Collector-Emitter Voltage (VCE) | 1200 V | — |
| Continuous Collector Current (IC, TC=25C) | 80 A | — |
| Pulsed Collector Current (ICM) | 160 A | — |
| Maximum Power Dissipation (Ptot) | 394 W | — |
| Gate-Emitter Voltage (VGE) | +/-20 V | — |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | [DATA_NEEDED: typical VCE(sat) value] | — |
| Integrated Anti-Parallel Diode | Yes (monolithic reverse-conducting) | — |
| Technology | Trench Field Stop, Reverse-Conducting RC-H5 | — |
| Gehäuse | TO-247-3 (PG-TO247-3) through-hole | PG-TO220-3-1 (Through Hole) |
| Montageart | Through Hole | Through Hole |
| Betriebs-Sperrschichttemperatur | -40C to +175C | — |
| Storage Temperature | -55C to +150C | — |
| Soldering Temperature (max 10s) | 260 C | — |
| Switching Application | Resonant / soft switching (induction cooking optimized) | — |
| RoHS Compliance | Compliant | — |
| Halogenfrei | Yes | — |
| MSL-Level | N/A (through-hole) | N/A (Through Hole) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID, TC=25C) | — | 100 A |
| Continuous Drain Current (ID, TC=100C) | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | — | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | — | [DATA_NEEDED: R_DS(on) max] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Betriebstemperaturbereich | — | -55C to +175C (TJ) |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| RoHS-Status | — | Compliant |
| Avalanche Energy Rated | — | Yes (single-pulse) |