IHW40N120R5XKSA1 vs IPP100N12S305AKSA2 Comparação
Comparação detalhada lado a lado de IHW40N120R5XKSA1 por Infineon e IPP100N12S305AKSA2 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ AtivoComparação de especificações
| Parâmetro | IHW40N120R5XKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | IGBTs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $3,50 | $3,78 |
| Collector-Emitter Voltage (VCE) | 1200 V | — |
| Continuous Collector Current (IC, TC=25C) | 80 A | — |
| Pulsed Collector Current (ICM) | 160 A | — |
| Maximum Power Dissipation (Ptot) | 394 W | — |
| Gate-Emitter Voltage (VGE) | +/-20 V | — |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | [DATA_NEEDED: typical VCE(sat) value] | — |
| Integrated Anti-Parallel Diode | Yes (monolithic reverse-conducting) | — |
| Technology | Trench Field Stop, Reverse-Conducting RC-H5 | — |
| Encapsulamento | TO-247-3 (PG-TO247-3) through-hole | PG-TO220-3-1 (Through Hole) |
| Tipo de montagem | Through Hole | Through Hole |
| Temperatura de junção de operação | -40C to +175C | — |
| Storage Temperature | -55C to +150C | — |
| Soldering Temperature (max 10s) | 260 C | — |
| Switching Application | Resonant / soft switching (induction cooking optimized) | — |
| RoHS Compliance | Compliant | — |
| Livre de halogênio | Yes | — |
| Nível MSL | N/A (through-hole) | N/A (Through Hole) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID, TC=25C) | — | 100 A |
| Continuous Drain Current (ID, TC=100C) | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | — | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | — | [DATA_NEEDED: R_DS(on) max] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Faixa de temperatura de operação | — | -55C to +175C (TJ) |
| Contagem de pinos | — | 3 (Gate, Drain, Source) |
| Status RoHS | — | Compliant |
| Avalanche Energy Rated | — | Yes (single-pulse) |