IHW40N120R5XKSA1 vs IPP100N12S305AKSA2 对比

详细并排对比 IHW40N120R5XKSA1 出自 Infineon 和 IPP100N12S305AKSA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ 量产中

规格对比

参数 IHW40N120R5XKSA1 IPP100N12S305AKSA2
品牌 Infineon Infineon
分类 IGBTs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.50 $3.78
Collector-Emitter Voltage (VCE) 1200 V —
Continuous Collector Current (IC, TC=25C) 80 A —
Pulsed Collector Current (ICM) 160 A —
Maximum Power Dissipation (Ptot) 394 W —
Gate-Emitter Voltage (VGE) +/-20 V —
VCE(sat) at IC=40A, VGE=15V, Tj=25C [DATA_NEEDED: typical VCE(sat) value] —
Integrated Anti-Parallel Diode Yes (monolithic reverse-conducting) —
Technology Trench Field Stop, Reverse-Conducting RC-H5 —
封装 TO-247-3 (PG-TO247-3) through-hole PG-TO220-3-1 (Through Hole)
安装类型 Through Hole Through Hole
工作结温 -40C to +175C —
Storage Temperature -55C to +150C —
Soldering Temperature (max 10s) 260 C —
Switching Application Resonant / soft switching (induction cooking optimized) —
RoHS Compliance Compliant —
无卤 Yes —
MSL 等级 N/A (through-hole) N/A (Through Hole)
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
FET Type — N-Channel
Drain-Source Voltage (VDS) — 120 V
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th)]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
工作温度范围 — -55C to +175C (TJ)
引脚数量 — 3 (Gate, Drain, Source)
RoHS 状态 — Compliant
Avalanche Energy Rated — Yes (single-pulse)

数据手册与资源

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