IKD15N60RFATMA1 vs IPL60R285P7AUMA1 Vergleich

Detaillierter Direktvergleich von IKD15N60RFATMA1 von Infineon und IPL60R285P7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IKD15N60RFATMA1 IPL60R285P7AUMA1
Marke Infineon Infineon
Kategorie IGBTs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,35 $0,88
Technology TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) Superjunction (SJ) N-channel MOSFET
Collector-Emitter Voltage (VCES) 600 V —
Continuous Collector Current (IC at TC=25C) 30 A —
Continuous Collector Current (IC at TC=100C) 15 A —
Pulsed Collector Current (ICM) [DATA_NEEDED: ICM value] —
Gate-Emitter Voltage (VGES) +/-20 V —
Gate-Emitter Threshold (VGE(th)) [DATA_NEEDED: VGE(th) typical value] —
VCE(sat) at IC=15A, VGE=15V 1.5 V (typical) —
Maximum Power Dissipation (Ptot) 250 W —
Betriebs-Sperrschichttemperatur -40C to +175C —
Integrated Anti-Parallel Diode Yes (RC-Drives Fast, co-packaged) —
Gehäuse PG-TO252-3 (DPAK), 3 pins (2 + tab) —
Montageart Surface Mount Surface Mount
Switching Speed Class Hard-switching, RC-Drives Fast —
Target Application Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) —
RoHS Compliance Compliant —
Manufacturer — Infineon Technologies
Series — CoolMOS P7
Drain-to-Source Voltage (V(BR)DSS) — 600 V
Continuous Drain Current (ID) at Tc=25C — 13 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM value]
On-State Resistance (RDS(on)) max at VGS=10V — 285 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Output Capacitance (Coss) typ — [DATA_NEEDED: Coss value]
Maximum Power Dissition (PD) at Tc=25C — 59 W
Betriebstemperaturbereich — -55C to +150C (junction)
Gehäuse / Bauform — PG-VSON-4 (surface mount)
Configuration — Single N-channel, 4 pins (Gate, Drain, Source, Tab)
RoHS-Status — Compliant
Gate ESD Protection — Integrated
MSL-Level — 1 (per Infineon PG-VSON-4 family)

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