IKD15N60RFATMA1 vs IPL60R285P7AUMA1 Comparaison
Comparaison détaillée côte à côte de IKD15N60RFATMA1 par Infineon et IPL60R285P7AUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IKD15N60RFATMA1 | IPL60R285P7AUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | IGBTs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,35 | $0,88 |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | Superjunction (SJ) N-channel MOSFET |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC at TC=25C) | 30 A | — |
| Continuous Collector Current (IC at TC=100C) | 15 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | — |
| Maximum Power Dissipation (Ptot) | 250 W | — |
| Température de jonction en fonctionnement | -40C to +175C | — |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | — |
| Boîtier | PG-TO252-3 (DPAK), 3 pins (2 + tab) | — |
| Type de montage | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | — |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | — |
| RoHS Compliance | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| Drain-to-Source Voltage (V(BR)DSS) | — | 600 V |
| Continuous Drain Current (ID) at Tc=25C | — | 13 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM value] |
| On-State Resistance (RDS(on)) max at VGS=10V | — | 285 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Output Capacitance (Coss) typ | — | [DATA_NEEDED: Coss value] |
| Maximum Power Dissition (PD) at Tc=25C | — | 59 W |
| Plage de température de fonctionnement | — | -55C to +150C (junction) |
| Boîtier / Format | — | PG-VSON-4 (surface mount) |
| Configuration | — | Single N-channel, 4 pins (Gate, Drain, Source, Tab) |
| Statut RoHS | — | Compliant |
| Gate ESD Protection | — | Integrated |
| Niveau MSL | — | 1 (per Infineon PG-VSON-4 family) |