IKD15N60RFATMA1 vs IPL60R285P7AUMA1 Comparación
Comparación detallada lado a lado de IKD15N60RFATMA1 por Infineon y IPL60R285P7AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IKD15N60RFATMA1 | IPL60R285P7AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,35 | $0,88 |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | Superjunction (SJ) N-channel MOSFET |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC at TC=25C) | 30 A | — |
| Continuous Collector Current (IC at TC=100C) | 15 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | — |
| Maximum Power Dissipation (Ptot) | 250 W | — |
| Temperatura de unión de funcionamiento | -40C to +175C | — |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | — |
| Encapsulado | PG-TO252-3 (DPAK), 3 pins (2 + tab) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | — |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | — |
| RoHS Compliance | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| Drain-to-Source Voltage (V(BR)DSS) | — | 600 V |
| Continuous Drain Current (ID) at Tc=25C | — | 13 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM value] |
| On-State Resistance (RDS(on)) max at VGS=10V | — | 285 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Output Capacitance (Coss) typ | — | [DATA_NEEDED: Coss value] |
| Maximum Power Dissition (PD) at Tc=25C | — | 59 W |
| Rango de temperatura de funcionamiento | — | -55C to +150C (junction) |
| Encapsulado / Carcasa | — | PG-VSON-4 (surface mount) |
| Configuration | — | Single N-channel, 4 pins (Gate, Drain, Source, Tab) |
| Estado RoHS | — | Compliant |
| Gate ESD Protection | — | Integrated |
| Nivel MSL | — | 1 (per Infineon PG-VSON-4 family) |