IMZ120R045M1H vs IMW120R045M1H Vergleich

Detaillierter Direktvergleich von IMZ120R045M1H von Infineon und IMW120R045M1H von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IMZ120R045M1H IMW120R045M1H
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $17,95 $0,00
Technology CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC SiC Trench MOSFET
Drain-Source Voltage (VDS max) 1200 V —
On-Resistance RDS(on) at 25°C 45 mΩ —
Continuous Drain Current (ID at Tc=25°C) 52 A —
Total Power Dissipation at Tc=25°C 228 W —
Gate Threshold Voltage VGS(th) 4.5 V (typical) —
Turn-off Gate Voltage 0 V capable —
Betriebs-Sperrschichttemperatur -55 °C to +175 °C —
Gehäuse TO-247-4 (PG-TO247-4-1) PG-TO247-3-41 (TO-247-3)
Montageart Through-hole Through Hole
Polarity N-Channel —
Driver Source Pin (Kelvin) Yes - dedicated sense/source pin —
Body Diode Commutation-robust, synchronous-rectification ready Robust, suitable for synchronous rectification
Qualification JEDEC 47/20/22 (industrial) Industrial grade
RoHS-Status Compliant —
Drain-Source Voltage (VDS) — 1200 V
On-Resistance (RDS(on)) — 45 mOhm at Tj = 25C
Continuous Drain Current (ID) — 52 A at Tc = 25C
Verlustleistung (Ptot) — 228 W at Tc = 25C
Gate Threshold Voltage (VGS(th)) — 4.5 V
Recommended Turn-On Gate Voltage — 15 V
Turn-Off Gate Voltage — 0 V
Configuration — Single N-channel with built-in body diode
Gate Drive Compatibility — IGBT-compatible gate drive
dv/dt Control — Fully controllable via gate resistor
Turn-Off Switching Losses — Temperature independent
Manufacturer Recommended Operating Margin — Do not exceed 80% of maximum ratings for optimum lifetime

Datenblätter & Ressourcen

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