IMZ120R045M1H vs IMW120R045M1H 비교
다음의 상세 나란히 비교: IMZ120R045M1H 제조: Infineon 및 IMW120R045M1H 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IMZ120R045M1H | IMW120R045M1H |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $17.95 | $0.00 |
| Technology | CoolSiC™ 1200 V SiC Trench MOSFET | CoolSiC SiC Trench MOSFET |
| Drain-Source Voltage (VDS max) | 1200 V | — |
| On-Resistance RDS(on) at 25°C | 45 mΩ | — |
| Continuous Drain Current (ID at Tc=25°C) | 52 A | — |
| Total Power Dissipation at Tc=25°C | 228 W | — |
| Gate Threshold Voltage VGS(th) | 4.5 V (typical) | — |
| Turn-off Gate Voltage | 0 V capable | — |
| 동작 접합 온도 | -55 °C to +175 °C | — |
| 패키지 | TO-247-4 (PG-TO247-4-1) | PG-TO247-3-41 (TO-247-3) |
| 실장 유형 | Through-hole | Through Hole |
| Polarity | N-Channel | — |
| Driver Source Pin (Kelvin) | Yes - dedicated sense/source pin | — |
| Body Diode | Commutation-robust, synchronous-rectification ready | Robust, suitable for synchronous rectification |
| Qualification | JEDEC 47/20/22 (industrial) | Industrial grade |
| RoHS 상태 | Compliant | — |
| Drain-Source Voltage (VDS) | — | 1200 V |
| On-Resistance (RDS(on)) | — | 45 mOhm at Tj = 25C |
| Continuous Drain Current (ID) | — | 52 A at Tc = 25C |
| 전력 손실 (Ptot) | — | 228 W at Tc = 25C |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V |
| Recommended Turn-On Gate Voltage | — | 15 V |
| Turn-Off Gate Voltage | — | 0 V |
| Configuration | — | Single N-channel with built-in body diode |
| Gate Drive Compatibility | — | IGBT-compatible gate drive |
| dv/dt Control | — | Fully controllable via gate resistor |
| Turn-Off Switching Losses | — | Temperature independent |
| Manufacturer Recommended Operating Margin | — | Do not exceed 80% of maximum ratings for optimum lifetime |