IPA60R190C6XKSA1 vs IPP60R180P7XKSA1 Vergleich
Detaillierter Direktvergleich von IPA60R190C6XKSA1 von Infineon und IPP60R180P7XKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPA60R190C6XKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $1,30 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS C6 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| Betriebstemperaturbereich | -55C to +150C | -55 °C to +150 °C |
| Gehäuse | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO220-3 (through-hole) |
| Montageart | Through Hole | Through Hole |
| Tab Isolation | Fully isolated (4 kV) | — |
| RoHS-Status | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | CoolMOS P7 (Superjunction N-Channel) |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| Anzahl der Pins | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes |
| Lead-Free | — | Yes |
| MSL-Level | — | N/A (through-hole) |