IPA60R190C6XKSA1 vs IPP60R180P7XKSA1 Comparison

Detailed side-by-side comparison of IPA60R190C6XKSA1 by Infineon and IPP60R180P7XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPA60R190C6XKSA1 IPA60R190C6XKSA1 - 600V 20.2A CoolMOS C6 N-MOSFET | Infineon

IPA60R190C6XKSA1 - 600V 20.2A CoolMOS C6 N-MOSFET | Infineon

IPA60R190C6XKSA1 βœ“ Active

Specification Comparison

Parameter IPA60R190C6XKSA1 IPP60R180P7XKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $1.30
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS C6 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25C) 20.2 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (PD, Tc=25C) 34 W β€”
On-State Resistance (RDS(on)) 190 mOhm at VGS=10V, ID=9.5A β€”
Gate Threshold Voltage (VGS(th)) 3.5 V β€”
Gate Charge (Qg, typ) [DATA_NEEDED: Qg typ] β€”
Operating Temperature Range -55C to +150C -55 Β°C to +150 Β°C
Package PG-TO220-FP (TO-220 FullPAK, 3+tab) PG-TO220-3 (through-hole)
Mounting Type Through Hole Through Hole
Tab Isolation Fully isolated (4 kV) β€”
RoHS Status Compliant Compliant
Lead Free Yes β€”
Technology β€” CoolMOS P7 (Superjunction N-Channel)
Continuous Drain Current (ID) at TC=25Β°C β€” 18 A
Pulsed Drain Current (ID,pulse) β€” [DATA_NEEDED: pulsed drain current at TC=25Β°C]
On-Resistance RDS(on) max at VGS=10V β€” 180 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 3.5 V
Gate Charge Qg typ β€” [DATA_NEEDED: total gate charge at VGS=10V]
Power Dissipation PD at TC=25Β°C β€” 72 W
Number of Pins β€” 3 (Gate, Drain, Source)
Avalanche Energy Rated β€” Yes
Lead-Free β€” Yes
MSL Level β€” N/A (through-hole)

Datasheets & Resources

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