IPB020NE7N3GATMA1 vs BSC054N04NSGATMA1 Vergleich
Detaillierter Direktvergleich von IPB020NE7N3GATMA1 von Infineon und BSC054N04NSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB020NE7N3GATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,31 | $0,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020NE7N3GATMA1 | BSC054N04NSGATMA1 |
| Technology | OptiMOS 3 N-Channel Power MOSFET | OptiMOS 3 (N-Channel Trench MOSFET) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | 40 V |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| On-State Resistance RDS(on) | 2.0 mΩ typical (per part number code) | — |
| Gehäuse | PG-TO263-3 (D²PAK, TO-263AB) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55C to +150C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | — |
| Continuous Drain Current (ID) at Tc=25C | — | 81 A |
| Continuous Drain Current (ID) at Ta=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 5.4 mOhm |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation at Tc=25C | — | 57 W |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Gate Drive Voltage (recommended) | — | 10 V |
| Lead-Free Reflow | — | Yes |