IPB020NE7N3GATMA1 vs BSC054N04NSGATMA1 对比
详细并排对比 IPB020NE7N3GATMA1 出自 Infineon 和 BSC054N04NSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB020NE7N3GATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.31 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020NE7N3GATMA1 | BSC054N04NSGATMA1 |
| Technology | OptiMOS 3 N-Channel Power MOSFET | OptiMOS 3 (N-Channel Trench MOSFET) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | 40 V |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| On-State Resistance RDS(on) | 2.0 mΩ typical (per part number code) | — |
| 封装 | PG-TO263-3 (D²PAK, TO-263AB) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single | — |
| 工作温度范围 | -55C to +175C (junction) | -55C to +150C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | — |
| Continuous Drain Current (ID) at Tc=25C | — | 81 A |
| Continuous Drain Current (ID) at Ta=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 5.4 mOhm |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation at Tc=25C | — | 57 W |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Gate Drive Voltage (recommended) | — | 10 V |
| Lead-Free Reflow | — | Yes |