IPB020NE7N3GATMA1 vs BSC054N04NSGATMA1 比較
詳細な並列比較: IPB020NE7N3GATMA1 メーカー: Infineon および BSC054N04NSGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPB020NE7N3GATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.31 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020NE7N3GATMA1 | BSC054N04NSGATMA1 |
| Technology | OptiMOS 3 N-Channel Power MOSFET | OptiMOS 3 (N-Channel Trench MOSFET) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | 40 V |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| On-State Resistance RDS(on) | 2.0 mΩ typical (per part number code) | — |
| パッケージ | PG-TO263-3 (D²PAK, TO-263AB) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| Configuration | Single | — |
| 動作温度範囲 | -55C to +175C (junction) | -55C to +150C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | — |
| Continuous Drain Current (ID) at Tc=25C | — | 81 A |
| Continuous Drain Current (ID) at Ta=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 5.4 mOhm |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation at Tc=25C | — | 57 W |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Gate Drive Voltage (recommended) | — | 10 V |
| Lead-Free Reflow | — | Yes |