IPB025N10N3GATMA1 vs IPB017N10N5LFATMA1 Vergleich
Detaillierter Direktvergleich von IPB025N10N3GATMA1 von Infineon und IPB017N10N5LFATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPB025N10N3GATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,74 | $4,05 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V | — |
| Input Capacitance (Ciss) | 2.58 nF | — |
| Gate Charge (Qg) Typical | [DATA_NEEDED: Qg value] | — |
| Gehäuse | PG-TO263-7 (D2PAK-7) 6+Tab | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55C to +175C (junction) |
| Technology | OptiMOS 3 trench MOSFET | MOSFET (Metal Oxide Semiconductor) |
| MSL-Level | 1 (unlimited) | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 Linear FET |
| Continuous Drain Current (ID) @ TC=25C | — | 180 A |
| Continuous Drain Current (ID) @ TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD) @ TC=25C | — | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | — | 1.7 mΩ (max) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gehäuse / Bauform | — | PG-TO263-7 (D2PAK-7), surface mount |
| Avalanche Rated | — | Yes |
| Linear-Mode (SOA) Optimized | — | Yes (OptiMOS Linear FET) |