IPB031N08N5ATMA1 vs IPD046N08N5ATMA1 Vergleich
Detaillierter Direktvergleich von IPB031N08N5ATMA1 von Infineon und IPD046N08N5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB031N08N5ATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,62 | $0,78 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS™ 5 trench MOSFET |
| Drain-Source Voltage (VDS) Max | 80 V | 80 V |
| Continuous Drain Current (ID) | 120 A (Tc) | — |
| Power Dissipation (PD) Max | 167 W (Tc) | — |
| On-Resistance (RDS(on)) Max | 3.1 mOhm (VGS=10V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Betriebstemperaturbereich | -55 C to +175 C | — |
| Gehäuse | PG-TO263-3 (D2PAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source + Tab) | — |
| Tab Connection | Drain (electrically connected to pin) | — |
| RoHS-Status | Compliant | ROHS3 Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | Yes (per Arrow listing) | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS™ 5 80V |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25°C | — | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 4.6 mΩ |
| Power Dissipation (PD) at Tc=25°C | — | 125 W |
| Betriebs-Sperrschichttemperaturbereich | — | -55 °C to +175 °C |
| Gehäuse / Bauform | — | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Configuration | — | Single N-channel, 3-pin (Gate / Drain tab / Source) |