IPB038N12N3GATMA1 vs IPB017N10N5LFATMA1 Vergleich
Detaillierter Direktvergleich von IPB038N12N3GATMA1 von Infineon und IPB017N10N5LFATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB038N12N3GATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,78 | $4,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| Gehäuse / Bauform | PG-TO263-3 (D2PAK) | PG-TO263-7 (D2PAK-7), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | MOSFET (Metal Oxide Semiconductor) |
| Gate Drive | Logic-level compatible | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55C to +175C (junction) |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| RoHS-Status | Compliant | Compliant |
| Avalanche Rated | Yes | Yes |
| Series | — | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ TC=25C | — | 180 A |
| Continuous Drain Current (ID) @ TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD) @ TC=25C | — | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | — | 1.7 mΩ (max) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| MSL-Level | — | 1 (unlimited) |
| Linear-Mode (SOA) Optimized | — | Yes (OptiMOS Linear FET) |