IPB038N12N3GATMA1 vs IPB017N10N5LFATMA1 对比
详细并排对比 IPB038N12N3GATMA1 出自 Infineon 和 IPB017N10N5LFATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB038N12N3GATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.78 | $4.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| 封装 / 外壳 | PG-TO263-3 (D2PAK) | PG-TO263-7 (D2PAK-7), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | MOSFET (Metal Oxide Semiconductor) |
| Gate Drive | Logic-level compatible | — |
| 工作温度范围 | -55C to +175C (junction) | -55C to +175C (junction) |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| RoHS 状态 | Compliant | Compliant |
| Avalanche Rated | Yes | Yes |
| Series | — | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ TC=25C | — | 180 A |
| Continuous Drain Current (ID) @ TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD) @ TC=25C | — | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | — | 1.7 mΩ (max) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| MSL 等级 | — | 1 (unlimited) |
| Linear-Mode (SOA) Optimized | — | Yes (OptiMOS Linear FET) |