IPB100N04S4H2ATMA1 vs IPB120N04S402ATMA1 Vergleich
Detaillierter Direktvergleich von IPB100N04S4H2ATMA1 von Infineon und IPB120N04S402ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPB100N04S4H2ATMA1 | IPB120N04S402ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,42 | $1,85 |
| FET Type | N-Channel, Enhancement Mode | N-Channel, Enhancement Mode |
| Technology | OptiMOS-T2 (trench gate) | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Gehäuse | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TO263-3 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (up to 260C peak reflow) | — |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant (Green Product) | Green Product (RoHS compliant) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T2 |
| Continuous Drain Current (ID, TC) | — | 120 A |
| Power Dissipation (PD, TC) | — | 158 W |
| RDS(on) (typ @ VGS=10 V) | — | 1.8 mΩ |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Betriebstemperaturbereich | — | -55 °C to +175 °C |
| Maximum Junction Temperature | — | 175 °C |
| Gate Threshold Voltage (VGS(th), typ) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg, typ) | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy Rating | — | 100% Avalanche Tested |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |