IPB100N04S4H2ATMA1 vs IPB120N04S402ATMA1 Comparison
Detailed side-by-side comparison of IPB100N04S4H2ATMA1 by Infineon and IPB120N04S402ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 β ActiveInfineon
IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon
IPB120N04S402ATMA1 β ActiveSpecification Comparison
| Parameter | IPB100N04S4H2ATMA1 | IPB120N04S402ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $1.85 |
| FET Type | N-Channel, Enhancement Mode | N-Channel, Enhancement Mode |
| Technology | OptiMOS-T2 (trench gate) | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| RDS(on) at VGS=10V | 2.4 mΞ© typical | β |
| Maximum Power Dissition (PD) at TC=25C | 115 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Storage Temperature | [DATA_NEEDED: storage temp range] | β |
| Package | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260C peak reflow) | β |
| Avalanche Energy (EAS) | 100% avalanche tested | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant (Green Product) | Green Product (RoHS compliant) |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-T2 |
| Continuous Drain Current (ID, TC) | β | 120 A |
| Power Dissipation (PD, TC) | β | 158 W |
| RDS(on) (typ @ VGS=10 V) | β | 1.8 mΞ© |
| Pin Count | β | 3 (2 + Tab) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| Maximum Junction Temperature | β | 175 Β°C |
| Gate Threshold Voltage (VGS(th), typ) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg, typ) | β | [DATA_NEEDED: total gate charge] |
| Avalanche Energy Rating | β | 100% Avalanche Tested |
| Moisture Sensitivity Level (MSL) | β | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) |