IPB100N12S305ATMA2 vs IPP075N15N3GXKSA1 Vergleich

Detaillierter Direktvergleich von IPB100N12S305ATMA2 von Infineon und IPP075N15N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPB100N12S305ATMA2 IPP075N15N3GXKSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,95 $1,92
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 120V —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 120 V 150 V
Continuous Drain Current (ID) at Tc 100 A —
Power Dissipation (PD) at Tc 300 W —
Drain-Source On-Resistance RDS(on) 0.0048 ohm (4.8 mΩ) at VGS=10 V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Maximum Junction Temperature 175 °C —
Avalanche Energy (EAS) 1445 mJ —
Gehäuse / Bauform PG-TO263-3-2 (D2PAK) —
Montageart Surface Mount Through Hole
Betriebstemperaturbereich -55 °C to +175 °C (TJ) [DATA_NEEDED: junction operating temperature range]
Automotive Qualification AEC-Q101 qualified —
RoHS-Status Compliant —
MSL-Level [DATA_NEEDED: MSL rating] —
Product Family — OptiMOS 3
Technology — N-Channel MOSFET (OptiMOS 3)
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gehäuse — PG-TO220-3 (TO-220 through-hole)
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

Datenblätter & Ressourcen

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