IPB17N25S3100ATMA1 vs BSC027N04LSGATMA1 Vergleich
Detaillierter Direktvergleich von IPB17N25S3100ATMA1 von Infineon und BSC027N04LSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB17N25S3100ATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,84 | $0,54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB17N25S3100ATMA1 | — |
| Transistortyp | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V | 40 V |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 64 A | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) | 100 mOhm max @ VGS = 10 V | — |
| Typical RDS(on) | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 19 nC @ VGS = 10 V | — |
| Input Capacitance (Ciss) | 1.5 nF | — |
| Output Capacitance (Coss) | 23 pF | — |
| Reverse Transfer Capacitance (Crss) | 625 pF | — |
| Power Dissipation (PD) | 107 W at Tc = 25 C | — |
| Betriebstemperaturbereich | -55 C to +175 C | -55°C to +150°C |
| Gehäuse | PG-TO263-3-2 (D2PAK-2) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Montageart | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Rated | 100% avalanche tested | — |
| RoHS-Status | Compliant (Green Product) | Compliant |
| Product Family | — | OptiMOS 3 |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 24 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.7 mΩ |
| Power Dissipation (Ta=25°C) | — | 2.5 W |
| Verlustleistung (TC=25°C) | — | 83 W |
| Technology | — | OptiMOS 3 (Trench) |
| MSL-Level | — | 1 |
| Halogenfrei | — | Yes |