IPB60R040CFD7ATMA1 vs IPB60R125C6ATMA1 Vergleich
Detaillierter Direktvergleich von IPB60R040CFD7ATMA1 von Infineon und IPB60R125C6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPB60R040CFD7ATMA1 | IPB60R125C6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,19 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Verlustleistung (TC=25°C) | 227 W | — |
| Betriebstemperaturbereich | -55°C to +150°C | — |
| Gehäuse | PG-TO263-3-2 (D2PAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Series | — | CoolMOS™ C6 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 30 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 125 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: Qg typical value] |
| Power Dissipation (PD) at TC=25°C | — | 219 W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +150°C |
| Gehäuse / Bauform | — | PG-TO263-3 (D2PAK, surface mount) |
| Supplier Device Package | — | PG-TO263-3 |
| Lead-Free Status | — | Yes |